Technical Specifications
Manufacturer: ABB Switzerland Ltd., Semiconductors
Model: 5SHX1060H0003
Order Code: 3BHB020538R0001
Product Type: RC-IGCT (Reverse-Conducting Integrated Gate-Commutated Thyristor)
Repetitive Peak Off-State Voltage (V_DRM): 5500 V
Permanent DC-Link Voltage: 3300 V (for 100 FIT failure rate, 0–115 °C)
Maximum Average On-State Current (I_TAVM): 355 A (half-sine, T_C = 85 °C)
Maximum RMS On-State Current (I_TRMS): 555 A
Industrial Nominal Continuous Current: 1060 A (drive-bridge application rating)
Maximum Peak Non-Repetitive Surge Current (I_TSM): 7.5 kA (t_p = 10 ms, T_j = 115 °C)
Limiting Load Integral (I²t): 286 × 10³ A²s (t_p = 10 ms)
On-State Voltage (V_T): ≤ 3.45 V at I_T = 900 A, T_j = 115 °C
Threshold Voltage (V_T0): 1.65 V
Slope Resistance (r_T): 2 mΩ
Turn-On Delay Time (t_don): ≤ 3 µs (V_D = 3300 V, T_j = 115 °C)
Rise Time (t_r): ≤ 1 µs (I_T = 900 A, di/dt = 290 A/µs)
Min. On-Time: 10 µs
Turn-On Energy per Pulse (E_on): ≤ 0.5 J
Max. Rate of Rise of On-State Current (di/dt_crit): 340 A/µs (f = 500 Hz, T_j = 115 °C)
Trigger Interface: Direct fiber-optic control (optically isolated digital gate signal)
Gate Drive Voltage: +15 V (turn-on) / -10 to -15 V (turn-off)
Gate Driver Power Supply: DC 24 V ±10 %
Mounting Force: 18–22 kN
Pole-Piece Diameter: 63 mm ±0.1 mm
Housing Thickness: 26 mm ±0.5 mm
Surface Area / Creepage Distance: ≥ 33 mm
Air Strike Distance: ≥ 13 mm
Dimensions: 239 mm (L) × 62.5 mm (H) × 200 mm (W)
Weight: 1.7 kg (complete assembly approx. 1.93 kg with gate driver)
Cooling Method: Direct liquid cooling (de-ionized water or water-glycol, 4–8 L/min per module)
Recommended Coolant Inlet Temperature: 15–45 °C
Max. Pressure Drop Across Cooling Interface: 0.5 bar
Operating Junction Temperature: 0 to +115 °C
Operating Ambient Temperature: -25 to +85 °C
Storage Temperature: -40 to +85 °C
Protection Class: Hermetic press-pack, IP00 (installed inside sealed drive cubicle)
Certifications: CE, RoHS compliant
Country of Origin: Sweden
HS Code: 8541300000

Functional Features
Monolithic RC-IGCT integration houses both the gate-commutated thyristor pellet and its anti-parallel freewheeling diode in a single silicon die within one press-pack housing, eliminating the need for an external diode. The device features snubber-less turn-off capability owing to its high dv/dt rating. Direct fiber-optic gate control provides complete galvanic isolation between the control electronics and the high-power circuit. Double-sided cooling via direct liquid cooling ensures stable junction temperature under continuous heavy load.
Application Scenarios
Core switching component in ABB ACS5000 and ACS6000 medium-voltage variable frequency drives. Used in HVDC transmission valves, STATCOM and other FACTS devices, wind power converters, and large industrial motor drives for pumps, compressors, and rolling mills.
Installation and Usage Notes
Mount using a calibrated press applying 18–22 kN clamping force against a flat, clean liquid-cooled heat sink. Ensure the cooling circuit is pressurized and flow-checked before applying DC-link voltage. Connect the fiber-optic transmit and receive cables to the gate driver observing correct polarity. Verify gate driver auxiliary supply (24 V DC) is within tolerance before de-inhibiting the converter. Do not handle the bare press-pack without ESD and mechanical protection; always follow ABB’s Press-Pack Installation Manual for torque and alignment procedures.














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