Technical Specifications
Output voltage: 0 to -1000V DC. Output current: 100mA maximum. Control input: 0-10V analog. Ripple: <1V peak-to-peak. Power supply: 24V DC input. Power dissipation: 25W. Operating temperature: 15°C to +35°C.
Functional Features
High-voltage ESC bias output. Analog voltage control input. Current monitoring output. Arc detection and protection. Low ripple output.
Application Scenarios
It provides electrostatic chuck bias power for wafer clamping and backside cooling in Lam dielectric and conductor etch systems.
Performance Parameters
Voltage range: 0 to -1000V DC. Ripple: <1V p-p. Response time: <10ms. Operating temperature range: 15°C to +35°C.
Material Composition
PCB: high-voltage rated FR-4. High-voltage components: diodes, capacitors. Connectors: high-voltage rated connectors.
Structural Characteristics
High-voltage module PCB, status indicators, high-voltage output connector, card edge interface.
Working Principle
It generates regulated high-voltage DC from low-voltage input, controlled by an analog setpoint signal. It provides electrostatic clamping voltage to the wafer chuck and monitors output current for arc detection.
Installation Requirements
Install in designated power module slot. Connect ESC high-voltage cable. Connect analog control input. Verify polarity.
Usage Notes
High voltage – follow lockout/tagout procedures. Do not operate without load. Inspect connectors for arcing. Calibrate voltage periodically.
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