Technical Specifications
Input channels: 12 optical detector inputs. Wavelength range: 190nm to 900nm. Sampling rate: 2kHz per channel. Resolution: 18-bit. Power supply: 24V DC. Power dissipation: 15W. Operating temperature: 15°C to +35°C.
Functional Features
Twelve-channel high-sensitivity optical input. High-speed 18-bit digitization. Advanced endpoint detection algorithms. Multiple wavelength monitoring. Compatible with advanced etch recipes.
Application Scenarios
It provides high-precision endpoint detection for high-aspect-ratio etch, shallow trench isolation and advanced plasma processing in Lam semiconductor manufacturing systems.
Performance Parameters
Sampling rate: 2kHz per channel. Resolution: 18-bit. Wavelength range: 190-900nm. Operating temperature range: 15°C to +35°C.
Material Composition
PCB: FR-4. Detectors: enhanced silicon photodiodes. Components: low-noise amplifiers and high-speed ADCs. Connectors: optical and electrical.
Structural Characteristics
Standard PCB, status LEDs, fiber ports, card edge connector.
Working Principle
It receives multi-wavelength optical emission from the plasma chamber, converts light to high-resolution digital data, and applies advanced signal processing algorithms to reliably detect etch endpoint with high precision.
Installation Requirements
Install in control card cage. Connect optical fibers. Calibrate spectral reference. Configure endpoint recipes.
Usage Notes
Keep fiber ends clean. Calibrate periodically. Handle optical components carefully. Follow ESD procedures.
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