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Speed Grades: 100 ns, 150 ns, 200 ns, 250 ns
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Power Requirements
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+5 V DC: 900 mA typical, 1 A maximum
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Battery: 1.4 A·h, 6-year life typical
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Battery Backup: On-board circuit maintains RAM contents during power failure
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VMEbus Interface
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Compliant with VMEbus specification C.1
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A24:D16/D08(EO) DTB slave
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4 bus-grant lines and IACK daisy-chained
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Form Factor: 3U single-height VME board
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Environmental Ratings
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Operating temperature: 0 °C to 65 °C
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Non-operating temperature: –40 °C to 85 °C
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Humidity: 5 % to 95 % RH non-condensing
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Shock: 30 g operating, 50 g non-operating
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Vibration: 2.5 g operating, 5.0 g non-operating
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Functional Features
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Dual Memory Banks: Two banks of four sockets allow mixed memory types and sizes
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Jumper Selectable Configuration: Address, memory size, speed, and pinout set via jumpers
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Power-Down Protection: Write-prohibited below 4.75 V to prevent data corruption
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SYSRESET Option: Asserts VMEbus SYSRESET for system-level reset control
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Front-Panel Kit: Optional 6 U front-panel kit for user I/O indicators
Application Scenarios
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Industrial Automation: Real-time data buffering for PLC and DCS systems in harsh factory environments
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Defense and Aerospace: Mission computers, avionics test benches, and radar data storage
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Transportation: On-board train control and trackside signaling systems requiring reliable memory retention
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Energy Management: Substation SCADA and renewable-energy inverters needing persistent event logging
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